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  Datasheet File OCR Text:
 BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
Power dissipation.
Production specification
2SC2715
Pb
Lead-free
APPLICATIONS
Audio frequency general purpose amplifier applications.
SOT-23
ORDERING INFORMATION
Type No. 2SC2715 Marking RR1/RO1/RY1 Package Code SOT-23
MAXIMUM RATING @ Ta=25 unless otherwise specified
Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 35 30 4 50 150 -55~150 Units V V V mA mW
ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified
Document number: BL/SSSTC099 Rev.A
www.galaxycn.com 1
BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Test conditions IC=10A,IE=0 IC=1mA,IB=0
B
Production specification
2SC2715
MIN 35 30 4 0.1 0.1 40 240 0.4 1 100 400 V V MHz TYP MAX UNIT V V V A A
IE=10A,IC=0 VCB=35V,IE=0 VEB=4V,IC=0 VCE=12V,IC=2mA IC=10mA, IB=1mA
B
IC=10mA, IB=1mA
B
VCE=10V, IC= 1mA
CLASSIFICATION
Rank Range Marking
OF
R 40-80 RR1
hFE(1)
O 70-140 RO1 Y 120-240 RY1
TYPICAL CHARACTERISTICS @ Ta=25 unless otherwise specified
Document number: BL/SSSTC099 Rev.A
www.galaxycn.com 2
BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
PACKAGE OUTLINE
Plastic surface mounted package
A E
Production specification
2SC2715
SOT-23
SOT-23
Dim A B C D Min 2.85 1.25 0.37 0.35 1.85 0.02 2.35 Max 2.95 1.35 0.43 0.48 1.95 0.1 2.45
K
B
1.0Typical
D G
J
E G H
H C
J K
0.1Typical
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
PACKAGE
Device 2SC2715
INFORMATION
Package SOT-23 Shipping 3000/Tape&Reel
Document number: BL/SSSTC099 Rev.A
www.galaxycn.com 3


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